Component information
DMN3060LVT-13
DMN3060LVT-13 component information and product attributes.
Product information
- Manufacturer
- Diodes Incorporated
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Vgs(th) (Max) @ Id
- 1.8V @ 250µA
- Manufacturer
- Diodes Incorporated
- Gate Charge (Qg) (Max) @ Vgs
- 11.3nC @ 10V
- Packaging
- Tape & Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds
- 395pF @ 15V
- Part Status
- Active
- Power - Max
- 830mW
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Configuration
- 2 N-Channel (Dual)
- Mounting Type
- Surface Mount
- Drain to Source Voltage (Vdss)
- 30V
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Current - Continuous Drain (Id) @ 25°C
- 3.6A (Ta)
- Supplier Device Package
- TSOT-23-6
- Rds On (Max) @ Id, Vgs
- 60mOhm @ 3.1A, 10V
- Base Product Number
- DMN3060
Documentation and references
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ