Component information
DMN3190LDWQ-7
DMN3190LDWQ-7 component information and product attributes.
Product information
- Manufacturer
- Diodes Incorporated
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Gate Charge (Qg) (Max) @ Vgs
- 2nC @ 10V
- Manufacturer
- Diodes Incorporated
- Input Capacitance (Ciss) (Max) @ Vds
- 87pF @ 20V
- Packaging
- Tape & Reel (TR)
- Power - Max
- 320mW (Ta)
- Part Status
- Active
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Grade
- Automotive
- Configuration
- 2 N-Channel (Dual)
- Qualification
- AEC-Q101
- Drain to Source Voltage (Vdss)
- 30V
- Mounting Type
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C
- 1A (Ta)
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Rds On (Max) @ Id, Vgs
- 190mOhm @ 1.3A, 10V
- Supplier Device Package
- SOT-363
- Vgs(th) (Max) @ Id
- 2.8V @ 250µA
- Base Product Number
- DMN3190
Documentation and references
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