Component information
DMN3900UFA-7B
Diodes Incorporated DMN3900UFA-7B: Single FETs, MOSFETs. Package / Case: 3-XFDFN. Supplier Device Package: X2-DFN0806-3.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Mfr
- Diodes Incorporated
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs
- 0.7 nC @ 4.5 V
- Vgs (Max)
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds
- 42.2 pF @ 25 V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 390mW (Ta)
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss)
- 30 V
- Current - Continuous Drain (Id) @ 25°C
- 550mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs
- 760mOhm @ 200mA, 4.5V
- Mounting Type
- Surface Mount
- Supplier Device Package
- X2-DFN0806-3
- Package / Case
- 3-XFDFN
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- DMN3900
Documentation and references
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