Component information
DMN61D8LVT-7
Diodes Incorporated DMN61D8LVT-7: FET, MOSFET Arrays. Package / Case: SOT-23-6 Thin, TSOT-23-6. Supplier Device Package: TSOT-26.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Manufacturer
- Diodes Incorporated
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs
- 0.74nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds
- 12.9pF @ 12V
- Power - Max
- 820mW
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Configuration
- 2 N-Channel (Dual)
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 60V
- Current - Continuous Drain (Id) @ 25°C
- 630mA
- Rds On (Max) @ Id, Vgs
- 1.8Ohm @ 150mA, 5V
- Mounting Type
- Surface Mount
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package
- TSOT-26
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- DMN61
Documentation and references
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