Component information
DMN61D9UWQ-13
DMN61D9UWQ-13 component information and product attributes.
Product information
- Manufacturer
- Diodes Incorporated
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Gate Charge (Qg) (Max) @ Vgs
- 0.4 nC @ 4.5 V
- Mfr
- Diodes Incorporated
- Vgs (Max)
- ±20V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Input Capacitance (Ciss) (Max) @ Vds
- 28.5 pF @ 30 V
- Part Status
- Not For New Designs
- Power Dissipation (Max)
- 440mW (Ta)
- FET Type
- N-Channel
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Grade
- Automotive
- Drain to Source Voltage (Vdss)
- 60 V
- Qualification
- AEC-Q101
- Current - Continuous Drain (Id) @ 25°C
- 400mA (Ta)
- Mounting Type
- Surface Mount
- Drive Voltage (Max Rds On, Min Rds On)
- 1.8V, 5V
- Supplier Device Package
- SOT-323
- Rds On (Max) @ Id, Vgs
- 2Ohm @ 50mA, 5V
- Package / Case
- SC-70, SOT-323
- Vgs(th) (Max) @ Id
- 1V @ 250µA
- Base Product Number
- DMN61
Documentation and references
Documentation can be discussed with your inquiry.
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