Component information
DMN65D8LDW-7
Diodes Incorporated DMN65D8LDW-7: FET, MOSFET Arrays. Package / Case: 6-TSSOP, SC-88, SOT-363. Supplier Device Package: SOT-363.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Manufacturer
- Diodes Incorporated
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs
- 0.87nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds
- 22pF @ 25V
- Power - Max
- 300mW
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Configuration
- 2 N-Channel (Dual)
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 60V
- Current - Continuous Drain (Id) @ 25°C
- 180mA
- Rds On (Max) @ Id, Vgs
- 6Ohm @ 115mA, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Supplier Device Package
- SOT-363
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- DMN65
Documentation and references
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