Component information
DMN65D8LQ-13
Diodes Incorporated DMN65D8LQ-13: Single FETs, MOSFETs. Package / Case: TO-236-3, SC-59, SOT-23-3. Supplier Device Package: SOT-23-3.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Mfr
- Diodes Incorporated
- Part Status
- Active
- Gate Charge (Qg) (Max) @ Vgs
- 0.87 nC @ 10 V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 22 pF @ 25 V
- Power Dissipation (Max)
- 370mW (Ta)
- FET Type
- N-Channel
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Grade
- Automotive
- Drain to Source Voltage (Vdss)
- 60 V
- Qualification
- AEC-Q101
- Current - Continuous Drain (Id) @ 25°C
- 310mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)
- 5V, 10V
- Rds On (Max) @ Id, Vgs
- 3Ohm @ 115mA, 10V
- Vgs(th) (Max) @ Id
- 2V @ 250µA
- Mounting Type
- Surface Mount
- Supplier Device Package
- SOT-23-3
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- DMN65
Documentation and references
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ