Component information

DMP2006UFGQ-13

DMP2006UFGQ-13 component information and product attributes.

Product information

Manufacturer
Diodes Incorporated
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs
200 nC @ 10 V
Mfr
Diodes Incorporated
Vgs (Max)
±10V
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds
7500 pF @ 10 V
Part Status
Active
Power Dissipation (Max)
2.3W (Ta), 41W (Tc)
FET Type
P-Channel
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
Grade
Automotive
Drain to Source Voltage (Vdss)
20 V
Qualification
AEC-Q101
Current - Continuous Drain (Id) @ 25°C
17.5A (Ta), 40A (Tc)
Mounting Type
Surface Mount
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Supplier Device Package
POWERDI3333-8
Rds On (Max) @ Id, Vgs
5.5mOhm @ 15A, 4.5V
Package / Case
8-PowerVDFN
Vgs(th) (Max) @ Id
1V @ 250µA
Base Product Number
DMP2006

Documentation and references

Reference document ↗

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