DMP6018LPSQ-13

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Diodes Incorporated

Part Status

Active

Gate Charge (Qg) (Max) @ Vgs

13.7 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3505 pF @ 30 V

Power Dissipation (Max)

2.6W (Ta), 113W (Tc)

FET Type

P-Channel

Operating Temperature

-55°C ~ 150°C (TJ)

Technology

MOSFET (Metal Oxide)

Grade

Automotive

Drain to Source Voltage (Vdss)

60 V

Qualification

AEC-Q101

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

18mOhm @ 17A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Mounting Type

Surface Mount

Supplier Device Package

PowerDI5060-8

Package / Case

8-PowerTDFN

Packaging

Tape & Reel (TR); Cut Tape (CT)