Component information
DMT10H015LFG-7
Diodes Incorporated DMT10H015LFG-7: Single FETs, MOSFETs. Package / Case: 8-PowerVDFN. Supplier Device Package: POWERDI3333-8.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Mfr
- Diodes Incorporated
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs
- 33.3 nC @ 10 V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 1871 pF @ 50 V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 2W (Ta), 35W (Tc)
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss)
- 100 V
- Current - Continuous Drain (Id) @ 25°C
- 10A (Ta), 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 6V, 10V
- Rds On (Max) @ Id, Vgs
- 13.5mOhm @ 20A, 10V
- Mounting Type
- Surface Mount
- Supplier Device Package
- POWERDI3333-8
- Package / Case
- 8-PowerVDFN
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- DMT10
Documentation and references
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