Component information
DMT12H007LPS-13
Diodes Incorporated DMT12H007LPS-13: Single FETs, MOSFETs. Package / Case: 8-PowerTDFN. Supplier Device Package: PowerDI5060-8.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Mfr
- Diodes Incorporated
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs
- 49 nC @ 10 V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 3224 pF @ 60 V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 2.9W
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss)
- 120 V
- Current - Continuous Drain (Id) @ 25°C
- 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs
- 7.8mOhm @ 30A, 10V
- Mounting Type
- Surface Mount
- Supplier Device Package
- PowerDI5060-8
- Package / Case
- 8-PowerTDFN
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- DMT12
Documentation and references
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