Component information
DMT3011LDT-7
Diodes Incorporated DMT3011LDT-7: FET, MOSFET Arrays. Package / Case: 8-VDFN Exposed Pad. Supplier Device Package: V-DFN3030-8 (Type K).
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Manufacturer
- Diodes Incorporated
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs
- 13.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds
- 641pF @ 15V
- Power - Max
- 1.9W
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 155°C (TJ)
- Configuration
- 2 N-Channel (Dual) Asymmetrical
- Drain to Source Voltage (Vdss)
- 30V
- Current - Continuous Drain (Id) @ 25°C
- 8A, 10.7A
- Rds On (Max) @ Id, Vgs
- 20mOhm @ 6A, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-VDFN Exposed Pad
- Supplier Device Package
- V-DFN3030-8 (Type K)
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- DMT3011
Documentation and references
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ