Component information
DMT35M8LDG-7
Diodes Incorporated DMT35M8LDG-7: FET, MOSFET Arrays. Package / Case: 8-PowerVDFN. Supplier Device Package: PowerDI3333-8 (Type G).
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Manufacturer
- Diodes Incorporated
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 1.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs
- 22.7nC @ 10V, 16.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds
- 1510pF @ 15V, 1032pF @ 15V
- Power - Max
- 980mW (Ta), 2W (Tc)
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Configuration
- 2 N-Channel (Dual) Asymmetrical
- Drain to Source Voltage (Vdss)
- 30V
- Current - Continuous Drain (Id) @ 25°C
- 17A (Ta), 15.3A (Ta)
- Rds On (Max) @ Id, Vgs
- 4.7mOhm @ 20A, 10V, 5.8mOhm @ 18A, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerVDFN
- Supplier Device Package
- PowerDI3333-8 (Type G)
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
Documentation and references
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