Component information
DMT67M8LCGQ-7
DMT67M8LCGQ-7 component information and product attributes.
Product information
- Manufacturer
- Diodes Incorporated
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Gate Charge (Qg) (Max) @ Vgs
- 37.5 nC @ 10 V
- Mfr
- Diodes Incorporated
- Vgs (Max)
- ±20V
- Packaging
- Tape & Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds
- 2130 pF @ 30 V
- Part Status
- Active
- Power Dissipation (Max)
- 900mW (Tc)
- FET Type
- N-Channel
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Grade
- Automotive
- Drain to Source Voltage (Vdss)
- 60 V
- Qualification
- AEC-Q101
- Current - Continuous Drain (Id) @ 25°C
- 16A (Ta), 64.6A (Tc)
- Mounting Type
- Surface Mount
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Supplier Device Package
- V-DFN3333-8 (Type B)
- Rds On (Max) @ Id, Vgs
- 5.7mOhm @ 20A, 10V
- Package / Case
- 8-PowerVDFN
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA
- Base Product Number
- DMT67
Documentation and references
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