DMT69M5LH3

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Diodes Incorporated

Part Status

Last Time Buy

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

28.4 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1406 pF @ 30 V

FET Type

N-Channel

Power Dissipation (Max)

3.3W (Ta), 96W (Tc)

Technology

MOSFET (Metal Oxide)

Operating Temperature

-55°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss)

60 V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

10.5mOhm @ 20A, 10V

Mounting Type

Through Hole

Supplier Device Package

TO-251

Package / Case

TO-251-3 Stub Leads, IPAK

Packaging

Tube