DMTH10H017LPD-13

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays

Manufacturer

Diodes Incorporated

Part Status

Active

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

28.6nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

1986pF @ 50V

Power - Max

2.6W (Ta), 93W (Tc)

Technology

MOSFET (Metal Oxide)

Operating Temperature

-55°C ~ 175°C (TJ)

Configuration

2 N-Channel (Dual)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

59A (Tc)

Rds On (Max) @ Id, Vgs

17.4mOhm @ 17A, 10V

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Supplier Device Package

PowerDI5060-8 (Type E)

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

DMTH10