Component information
DMTH10H017LPDQ-13
Diodes Incorporated DMTH10H017LPDQ-13: FET, MOSFET Arrays. Package / Case: 8-PowerTDFN. Supplier Device Package: PowerDI5060-8 (Type E).
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Manufacturer
- Diodes Incorporated
- Part Status
- Active
- Gate Charge (Qg) (Max) @ Vgs
- 28.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds
- 1986pF @ 50V
- Power - Max
- 1.5W (Ta), 93W (Tc)
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Grade
- Automotive
- Configuration
- 2 N-Channel (Dual)
- Qualification
- AEC-Q101
- Drain to Source Voltage (Vdss)
- 100V
- Current - Continuous Drain (Id) @ 25°C
- 13A (Ta), 59A (Tc)
- Rds On (Max) @ Id, Vgs
- 17.4mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id
- 3V @ 250µA
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerTDFN
- Supplier Device Package
- PowerDI5060-8 (Type E)
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- DMTH10
Documentation and references
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