DMTH4014LFVWQ-13

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Diodes Incorporated

Part Status

Active

Gate Charge (Qg) (Max) @ Vgs

11.2 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

750 pF @ 20 V

Power Dissipation (Max)

3.1W

FET Type

N-Channel

Operating Temperature

-55°C ~ 175°C (TJ)

Technology

MOSFET (Metal Oxide)

Grade

Automotive

Drain to Source Voltage (Vdss)

40 V

Qualification

AEC-Q101

Current - Continuous Drain (Id) @ 25°C

11.5A (Ta), 49.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

13.7mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Mounting Type

Surface Mount, Wettable Flank

Supplier Device Package

PowerDI3333-8 (SWP) Type UX

Package / Case

8-PowerVDFN

Packaging

Tape & Reel (TR); Cut Tape (CT)