Component information
DRDNB26W-7
Diodes Incorporated DRDNB26W-7: Single, Pre-Biased Bipolar Transistors. Package / Case: 6-TSSOP, SC-88, SOT-363. Supplier Device Package: SOT-363.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single, Pre-Biased Bipolar Transistors
- Manufacturer
- Diodes Incorporated
- Part Status
- Obsolete
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 47 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max)
- 500nA
- Frequency - Transition
- 200 MHz
- Transistor Type
- NPN - Pre-Biased + Diode
- Power - Max
- 200 mW
- Current - Collector (Ic) (Max)
- 600 mA
- Voltage - Collector Emitter Breakdown (Max)
- 50 V
- Resistors Included
- R1 and R2
- Resistor - Base (R1)
- 220 Ohms
- Resistor - Emitter Base (R2)
- 4.7 kOhms
- Mounting Type
- Surface Mount
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Supplier Device Package
- SOT-363
- Packaging
- Tape & Reel (TR)
- Base Product Number
- DRDNB26
Documentation and references
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ