Component information
DSS4160FDB-7
Diodes Incorporated DSS4160FDB-7: Bipolar Transistor Arrays. Package / Case: 6-UDFN Exposed Pad. Supplier Device Package: U-DFN2020-6 (Type B).
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays
- Manufacturer
- Diodes Incorporated
- Part Status
- Active
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 150 @ 500mA, 2V
- Power - Max
- 405mW
- Frequency - Transition
- 175MHz
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Transistor Type
- 2 NPN (Dual)
- Current - Collector (Ic) (Max)
- 1A
- Voltage - Collector Emitter Breakdown (Max)
- 60V
- Vce Saturation (Max) @ Ib, Ic
- 240mV @ 50mA, 1A
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- Mounting Type
- Surface Mount
- Package / Case
- 6-UDFN Exposed Pad
- Supplier Device Package
- U-DFN2020-6 (Type B)
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- DSS4160
Documentation and references
Documentation can be discussed with your inquiry.
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