Component information

DTC123JET1G

onsemi DTC123JET1G: Single, Pre-Biased Bipolar Transistors. Package / Case: SC-75, SOT-416. Supplier Device Package: SC-75, SOT-416.

Product attributes

Category
Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single, Pre-Biased Bipolar Transistors
Manufacturer
onsemi
Part Status
Active
Resistor - Emitter Base (R2)
47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic
250mV @ 1mA, 10mA
Current - Collector Cutoff (Max)
500nA
Transistor Type
NPN - Pre-Biased
Power - Max
200 mW
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistors Included
R1 and R2
Resistor - Base (R1)
2.2 kOhms
Mounting Type
Surface Mount
Package / Case
SC-75, SOT-416
Supplier Device Package
SC-75, SOT-416
Packaging
Tape & Reel (TR); Cut Tape (CT)
Base Product Number
DTC123

Documentation and references

Manufacturer document ↗

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