Component information
DXT2010P5-13
DXT2010P5-13 component information and product attributes.
Product information
- Manufacturer
- Diodes Incorporated
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 100 @ 2A, 1V
- Mfr
- Diodes Incorporated
- Power - Max
- 3.2 W
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Frequency - Transition
- 130MHz
- Part Status
- Active
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Transistor Type
- NPN
- Mounting Type
- Surface Mount
- Current - Collector (Ic) (Max)
- 6 A
- Package / Case
- PowerDI™ 5
- Voltage - Collector Emitter Breakdown (Max)
- 60 V
- Supplier Device Package
- PowerDI™ 5
- Vce Saturation (Max) @ Ib, Ic
- 260mV @ 300mA, 6A
- Base Product Number
- DXT2010
- Current - Collector Cutoff (Max)
- 20nA (ICBO)
Documentation and references
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