Component information
DXT2013P5-13
Diodes Incorporated DXT2013P5-13: Single Bipolar Transistors. Package / Case: PowerDI™ 5. Supplier Device Package: PowerDI™ 5.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- Mfr
- Diodes Incorporated
- Part Status
- Active
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 100 @ 1A, 1V
- Power - Max
- 3.2 W
- Frequency - Transition
- 125MHz
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Transistor Type
- PNP
- Current - Collector (Ic) (Max)
- 5 A
- Voltage - Collector Emitter Breakdown (Max)
- 100 V
- Vce Saturation (Max) @ Ib, Ic
- 340mV @ 400mA, 4A
- Current - Collector Cutoff (Max)
- 20nA (ICBO)
- Mounting Type
- Surface Mount
- Package / Case
- PowerDI™ 5
- Supplier Device Package
- PowerDI™ 5
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- DXT2013
Documentation and references
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