Component information
DXTN10060DFJBQ-7
DXTN10060DFJBQ-7 component information and product attributes.
Product information
- Manufacturer
- Diodes Incorporated
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 340 @ 200mA, 2V
- Mfr
- Diodes Incorporated
- Power - Max
- 1.8 W
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Frequency - Transition
- 125MHz
- Part Status
- Active
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Transistor Type
- NPN
- Grade
- Automotive
- Current - Collector (Ic) (Max)
- 4 A
- Qualification
- AEC-Q101
- Voltage - Collector Emitter Breakdown (Max)
- 60 V
- Mounting Type
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic
- 320mV @ 200mA, 4A
- Package / Case
- 3-UDFN Exposed Pad
- Current - Collector Cutoff (Max)
- 100nA
- Supplier Device Package
- U-DFN2020-3 (Type B)
Documentation and references
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