Component information
DXTN58012DJAW-7
Diodes Incorporated DXTN58012DJAW-7: Single Bipolar Transistors. Package / Case: 3-UDFN Exposed Pad. Supplier Device Package: W-DFN2020-3 /SWP (Type A).
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- Mfr
- Diodes Incorporated
- Part Status
- Active
- Current - Collector Cutoff (Max)
- 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 325 @ 100mA, 2V
- Power - Max
- 695 mW
- Frequency - Transition
- 100MHz
- Transistor Type
- NPN
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Current - Collector (Ic) (Max)
- 4 A
- Voltage - Collector Emitter Breakdown (Max)
- 12 V
- Vce Saturation (Max) @ Ib, Ic
- 175mV @ 300mA, 6A
- Mounting Type
- Surface Mount, Wettable Flank
- Package / Case
- 3-UDFN Exposed Pad
- Supplier Device Package
- W-DFN2020-3 /SWP (Type A)
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
Documentation and references
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