Component information
DXTN5860DFDB-7
DXTN5860DFDB-7 component information and product attributes.
Product information
- Manufacturer
- Diodes Incorporated
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- Current - Collector Cutoff (Max)
- 100nA
- Mfr
- Diodes Incorporated
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 280 @ 500mA, 2V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Power - Max
- 690 mW
- Part Status
- Active
- Frequency - Transition
- 115MHz
- Transistor Type
- NPN
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Current - Collector (Ic) (Max)
- 6 A
- Mounting Type
- Surface Mount
- Voltage - Collector Emitter Breakdown (Max)
- 60 V
- Package / Case
- 3-UDFN Exposed Pad
- Vce Saturation (Max) @ Ib, Ic
- 315mV @ 300mA, 6A
- Supplier Device Package
- U-DFN2020-3 (Type B)
Documentation and references
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