Component information
EC3H02BA-TL-H
onsemi EC3H02BA-TL-H: Bipolar RF Transistors. Package / Case: 3-XFDFN. Supplier Device Package: ECSP1006-3.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Manufacturer
- onsemi
- Part Status
- Obsolete
- Power - Max
- 100mW
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 120 @ 20mA, 5V
- Current - Collector (Ic) (Max)
- 70mA
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- NPN
- Voltage - Collector Emitter Breakdown (Max)
- 10V
- Frequency - Transition
- 7GHz
- Noise Figure (dB Typ @ f)
- 1dB @ 1GHz
- Gain
- 8.5dB
- Mounting Type
- Surface Mount
- Package / Case
- 3-XFDFN
- Supplier Device Package
- ECSP1006-3
- Packaging
- Tape & Reel (TR)
- Base Product Number
- EC3H02
Documentation and references
Documentation can be discussed with your inquiry.
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