Component information
EC4H09C-TL-H
EC4H09C-TL-H component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Power - Max
- 120mW
- Manufacturer
- onsemi
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 70 @ 5mA, 1V
- Packaging
- Tape & Reel (TR)
- Current - Collector (Ic) (Max)
- 40mA
- Part Status
- Obsolete
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- NPN
- Mounting Type
- Surface Mount
- Voltage - Collector Emitter Breakdown (Max)
- 3.5V
- Package / Case
- 4-UFDFN
- Frequency - Transition
- 26GHz
- Supplier Device Package
- 4-ECSP1008
- Noise Figure (dB Typ @ f)
- 1.3dB @ 2GHz
- Base Product Number
- EC4H09
- Gain
- 15dB
Documentation and references
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