Component information
EMB9T2R
EMB9T2R component information and product attributes.
Product information
- Manufacturer
- Rohm Semiconductor
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays, Pre-Biased
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays, Pre-Biased
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 68 @ 5mA, 5V
- Manufacturer
- Rohm Semiconductor
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 250µA, 5mA
- Packaging
- Tape & Reel (TR)
- Current - Collector Cutoff (Max)
- 500nA
- Part Status
- Not For New Designs
- Frequency - Transition
- 250MHz
- Transistor Type
- 2 PNP - Pre-Biased (Dual)
- Power - Max
- 150mW
- Current - Collector (Ic) (Max)
- 100mA
- Mounting Type
- Surface Mount
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- Package / Case
- SOT-563, SOT-666
- Resistor - Base (R1)
- 10kOhms
- Supplier Device Package
- EMT6
- Resistor - Emitter Base (R2)
- 47kOhms
- Base Product Number
- EMB9T2
Documentation and references
Documentation can be discussed with your inquiry.
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