Component information
EMF23XV6T5
EMF23XV6T5 component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays, Pre-Biased
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays, Pre-Biased
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 35 @ 5mA, 10V / 120 @ 1mA, 6V
- Manufacturer
- onsemi
- Vce Saturation (Max) @ Ib, Ic
- 250mV @ 300µA, 10mA / 500mV @ 5mA, 50mA
- Packaging
- Bulk
- Current - Collector Cutoff (Max)
- 500nA, 500pA (ICBO)
- Part Status
- Discontinued at DigiKey
- Frequency - Transition
- 140MHz
- Transistor Type
- 1 NPN - Pre-Biased, 1 PNP
- Power - Max
- 357mW
- Current - Collector (Ic) (Max)
- 100mA
- Mounting Type
- Surface Mount
- Voltage - Collector Emitter Breakdown (Max)
- 50V, 60V
- Package / Case
- SOT-563, SOT-666
- Resistor - Base (R1)
- 10kOhms
- Supplier Device Package
- SOT-563
- Resistor - Emitter Base (R2)
- 10kOhms
Documentation and references
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ