Component information
EMF8T2R
Rohm Semiconductor EMF8T2R: Bipolar Transistor Arrays, Pre-Biased. Package / Case: SOT-563, SOT-666. Supplier Device Package: EMT6.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays, Pre-Biased
- Manufacturer
- Rohm Semiconductor
- Part Status
- Not For New Designs
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 68 @ 5mA, 5V / 270 @ 10mA, 2V
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
- Current - Collector Cutoff (Max)
- 500nA
- Frequency - Transition
- 250MHz, 320MHz
- Transistor Type
- 1 NPN Pre-Biased, 1 NPN
- Power - Max
- 150mW
- Current - Collector (Ic) (Max)
- 100mA, 500mA
- Voltage - Collector Emitter Breakdown (Max)
- 50V, 12V
- Resistor - Base (R1)
- 47kOhms
- Resistor - Emitter Base (R2)
- 47kOhms
- Mounting Type
- Surface Mount
- Package / Case
- SOT-563, SOT-666
- Supplier Device Package
- EMT6
- Packaging
- Tape & Reel (TR)
- Base Product Number
- EMF8T2
Documentation and references
Documentation can be discussed with your inquiry.
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ