Component information
EMG1T2R
EMG1T2R component information and product attributes.
Product information
- Manufacturer
- Rohm Semiconductor
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays, Pre-Biased
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays, Pre-Biased
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 56 @ 5mA, 5V
- Manufacturer
- Rohm Semiconductor
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 500µA, 10mA
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Current - Collector Cutoff (Max)
- 500nA
- Part Status
- Active
- Frequency - Transition
- 250MHz
- Transistor Type
- 2 NPN - Pre-Biased (Dual)
- Power - Max
- 150mW
- Current - Collector (Ic) (Max)
- 100mA
- Mounting Type
- Surface Mount
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- Package / Case
- 6-SMD (5 Leads), Flat Leads
- Resistor - Base (R1)
- 22kOhms
- Supplier Device Package
- EMT5
- Resistor - Emitter Base (R2)
- 22kOhms
- Base Product Number
- EMG1T2
Documentation and references
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