Component information
EMX1FHAT2R
EMX1FHAT2R component information and product attributes.
Product information
- Manufacturer
- Rohm Semiconductor
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays
- Power - Max
- 150mW
- Manufacturer
- Rohm Semiconductor
- Frequency - Transition
- 180MHz
- Packaging
- Tape & Reel (TR)
- Operating Temperature
- 150°C (TJ)
- Part Status
- Not For New Designs
- Grade
- Automotive
- Transistor Type
- 2 NPN (Dual)
- Qualification
- AEC-Q101
- Current - Collector (Ic) (Max)
- 150mA
- Mounting Type
- Surface Mount
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- Package / Case
- SOT-563, SOT-666
- Vce Saturation (Max) @ Ib, Ic
- 400mV @ 5mA, 50mA
- Supplier Device Package
- EMT6
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- Base Product Number
- EMX1FHAT2
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 120 @ 1mA, 6V
Documentation and references
Documentation can be discussed with your inquiry.
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ