Component information
EMZ8T2R
Rohm Semiconductor EMZ8T2R: Bipolar Transistor Arrays. Package / Case: SOT-563, SOT-666. Supplier Device Package: EMT6.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays
- Manufacturer
- Rohm Semiconductor
- Part Status
- Active
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 120 @ 1mA, 6V / 270 @ 10mA, 2V
- Power - Max
- 150mW
- Frequency - Transition
- 180MHz, 260MHz
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- 1 NPN, 1 PNP
- Current - Collector (Ic) (Max)
- 150mA, 500mA
- Voltage - Collector Emitter Breakdown (Max)
- 50V, 12V
- Vce Saturation (Max) @ Ib, Ic
- 400mV @ 5mA, 50mA / 250mV @ 10mA, 200mA
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- Mounting Type
- Surface Mount
- Package / Case
- SOT-563, SOT-666
- Supplier Device Package
- EMT6
- Packaging
- Tape & Reel (TR)
- Base Product Number
- EMZ8T2
Documentation and references
Documentation can be discussed with your inquiry.
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