Component information
EPC2108
EPC EPC2108: FET, MOSFET Arrays. Package / Case: 9-VFBGA. Supplier Device Package: 9-BGA (1.35x1.35).
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Manufacturer
- EPC
- Series
- eGaN®
- Part Status
- Obsolete
- Rds On (Max) @ Id, Vgs
- 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V
- Vgs(th) (Max) @ Id
- 2.5V @ 100µA, 2.5V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs
- 0.22nC @ 5V, 0.044nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds
- 22pF @ 30V, 7pF @ 30V
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Technology
- GaNFET (Gallium Nitride)
- Configuration
- 3 N-Channel (Half Bridge + Synchronous Bootstrap)
- Drain to Source Voltage (Vdss)
- 60V, 100V
- Current - Continuous Drain (Id) @ 25°C
- 1.7A, 500mA
- Mounting Type
- Surface Mount
- Package / Case
- 9-VFBGA
- Supplier Device Package
- 9-BGA (1.35x1.35)
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- EPC210
Documentation and references
Documentation can be discussed with your inquiry.
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ