Component information
EPC2110
EPC EPC2110: FET, MOSFET Arrays. Package / Case: Die. Supplier Device Package: Die.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Manufacturer
- EPC
- Series
- eGaN®
- Part Status
- Active
- Rds On (Max) @ Id, Vgs
- 60mOhm @ 4A, 5V
- Vgs(th) (Max) @ Id
- 2.5V @ 700µA
- Gate Charge (Qg) (Max) @ Vgs
- 0.8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds
- 80pF @ 60V
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Technology
- GaNFET (Gallium Nitride)
- Configuration
- 2 N-Channel (Dual) Common Source
- Drain to Source Voltage (Vdss)
- 120V
- Current - Continuous Drain (Id) @ 25°C
- 3.4A
- Package / Case
- Die
- Supplier Device Package
- Die
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- EPC211
Documentation and references
Documentation can be discussed with your inquiry.
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