Component information
EPC2111
EPC EPC2111: FET, MOSFET Arrays. Package / Case: Die. Supplier Device Package: Die.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Manufacturer
- EPC
- Part Status
- Obsolete
- Vgs(th) (Max) @ Id
- 2.5V @ 2mA, 2.5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs
- 2.2nC @ 5V, 5.8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds
- 230pF @ 15V, 595pF @ 15V
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Technology
- GaNFET (Gallium Nitride)
- Configuration
- 2 N-Channel (Half Bridge)
- Drain to Source Voltage (Vdss)
- 30V
- Current - Continuous Drain (Id) @ 25°C
- 16A (Ta)
- Rds On (Max) @ Id, Vgs
- 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V
- Mounting Type
- Surface Mount
- Package / Case
- Die
- Supplier Device Package
- Die
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- EPC211
Documentation and references
Documentation can be discussed with your inquiry.
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