Component information
EPC2367
EPC EPC2367: Single FETs, MOSFETs. Package / Case: 5-PowerWQFN. Supplier Device Package: 5-QFN (3.3x3.3).
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Mfr
- EPC
- Series
- eGaN®
- Part Status
- Active
- Rds On (Max) @ Id, Vgs
- 1.2mOhm @ 30A, 5V
- Vgs(th) (Max) @ Id
- 2.5V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs
- 17 nC @ 5 V
- Vgs (Max)
- +6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds
- 2170 pF @ 50 V
- FET Type
- N-Channel
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Technology
- GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss)
- 100 V
- Current - Continuous Drain (Id) @ 25°C
- 78A (Tj)
- Drive Voltage (Max Rds On, Min Rds On)
- 5V
- Mounting Type
- Surface Mount, Wettable Flank
- Supplier Device Package
- 5-QFN (3.3x3.3)
- Package / Case
- 5-PowerWQFN
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- EPC2367
Documentation and references
Documentation can be discussed with your inquiry.
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