Component information
FA4F4M-T1B-A
Renesas Electronics Corporation FA4F4M-T1B-A: Single, Pre-Biased Bipolar Transistors. Resistor - Base (R1): 22 kOhms. Resistor - Emitter Base (R2): 22 kOhms.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single, Pre-Biased Bipolar Transistors
- Manufacturer
- Renesas Electronics Corporation
- Part Status
- Obsolete
- Resistor - Base (R1)
- 22 kOhms
- Resistor - Emitter Base (R2)
- 22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 60 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic
- 200mV @ 250µ, 5mA
- Transistor Type
- NPN - Pre-Biased
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- Current - Collector (Ic) (Max)
- 100 mA
- Power - Max
- 200 mW
- Voltage - Collector Emitter Breakdown (Max)
- 50 V
- Resistors Included
- R1 and R2
- Packaging
- Box
- Base Product Number
- FA4F4M
Documentation and references
Documentation can be discussed with your inquiry.
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