Component information

FCU850N80Z

FCU850N80Z component information and product attributes.

Product information

Manufacturer
onsemi
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Vgs(th) (Max) @ Id
4.5V @ 600µA
Mfr
onsemi
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 10 V
Series
SuperFET® II
Vgs (Max)
±20V
Packaging
Tube
Input Capacitance (Ciss) (Max) @ Vds
1315 pF @ 100 V
Part Status
Obsolete
Power Dissipation (Max)
75W (Tc)
FET Type
N-Channel
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
800 V
Supplier Device Package
IPAK
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
FCU850
Rds On (Max) @ Id, Vgs
850mOhm @ 3A, 10V

Documentation and references

Manufacturer document ↗

Distributor reference ↗

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