Component information
FD200R12KE3HOSA1
Infineon Technologies FD200R12KE3HOSA1: IGBT Modules. Package / Case: Module. Supplier Device Package: Module.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; IGBTs; IGBT Modules
- Manufacturer
- Infineon Technologies
- Series
- C
- Part Status
- Active
- Current - Collector Cutoff (Max)
- 5 mA
- Input Capacitance (Cies) @ Vce
- 14 nF @ 25 V
- Input
- Standard
- NTC Thermistor
- No
- Operating Temperature
- -40°C ~ 125°C
- IGBT Type
- Trench Field Stop
- Configuration
- Single Chopper
- Voltage - Collector Emitter Breakdown (Max)
- 1200 V
- Power - Max
- 1050 W
- Vce(on) (Max) @ Vge, Ic
- 2.15V @ 15V, 200A
- Mounting Type
- Chassis Mount
- Package / Case
- Module
- Supplier Device Package
- Module
- Packaging
- Tray
- Base Product Number
- FD200R12
Documentation and references
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