Component information

FDA50N50

FDA50N50 component information and product attributes.

Product information

Manufacturer
onsemi
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Vgs(th) (Max) @ Id
5V @ 250µA
Mfr
onsemi
Gate Charge (Qg) (Max) @ Vgs
137 nC @ 10 V
Series
UniFET™
Vgs (Max)
±20V
Packaging
Tube
Input Capacitance (Ciss) (Max) @ Vds
6460 pF @ 25 V
Part Status
Obsolete
Power Dissipation (Max)
625W (Tc)
FET Type
N-Channel
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
500 V
Supplier Device Package
TO-3PN
Current - Continuous Drain (Id) @ 25°C
48A (Tc)
Package / Case
TO-3P-3, SC-65-3
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
FDA50
Rds On (Max) @ Id, Vgs
105mOhm @ 24A, 10V

Documentation and references

Manufacturer document ↗

Distributor reference ↗

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