Component information

FDC6312P

FDC6312P component information and product attributes.

Product information

Manufacturer
onsemi
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
Rds On (Max) @ Id, Vgs
115mOhm @ 2.3A, 4.5V
Manufacturer
onsemi
Vgs(th) (Max) @ Id
1.5V @ 250µA
Series
PowerTrench®
Gate Charge (Qg) (Max) @ Vgs
7nC @ 4.5V
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds
467pF @ 10V
Part Status
Active
Power - Max
700mW
Technology
MOSFET (Metal Oxide)
Operating Temperature
-55°C ~ 150°C (TJ)
Configuration
2 P-Channel (Dual)
Mounting Type
Surface Mount
FET Feature
Logic Level Gate
Package / Case
SOT-23-6 Thin, TSOT-23-6
Drain to Source Voltage (Vdss)
20V
Supplier Device Package
SuperSOT™-6
Current - Continuous Drain (Id) @ 25°C
2.3A
Base Product Number
FDC6312

Documentation and references

Manufacturer document ↗

Distributor reference ↗

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