Component information

FDME910PZT-P

FDME910PZT-P component information and product attributes.

Product information

Manufacturer
onsemi
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Rds On (Max) @ Id, Vgs
24mOhm @ 8A, 4.5V
Mfr
onsemi
Vgs(th) (Max) @ Id
1.5V @ 250µA
Series
PowerTrench®
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 4.5 V
Packaging
Tape & Reel (TR)
Vgs (Max)
±8V
Part Status
Discontinued at DigiKey
Input Capacitance (Ciss) (Max) @ Vds
2110 pF @ 10 V
FET Type
P-Channel
Power Dissipation (Max)
700mW (Ta)
Technology
MOSFET (Metal Oxide)
Operating Temperature
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
20 V
Mounting Type
Surface Mount
Current - Continuous Drain (Id) @ 25°C
8A (Ta)
Supplier Device Package
MicroFet 1.6x1.6 Thin
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Package / Case
6-PowerUFDFN

Documentation and references

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