Component information

FDMS86163P

FDMS86163P component information and product attributes.

Product information

Manufacturer
onsemi
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Vgs(th) (Max) @ Id
4V @ 250µA
Mfr
onsemi
Gate Charge (Qg) (Max) @ Vgs
59 nC @ 10 V
Series
PowerTrench®
Vgs (Max)
±25V
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds
4085 pF @ 50 V
Part Status
Active
Power Dissipation (Max)
2.5W (Ta), 104W (Tc)
FET Type
P-Channel
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
Mounting Type
Surface Mount
Drain to Source Voltage (Vdss)
100 V
Supplier Device Package
8-PQFN (5x6)
Current - Continuous Drain (Id) @ 25°C
7.9A (Ta), 50A (Tc)
Package / Case
8-PowerTDFN
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Base Product Number
FDMS86163
Rds On (Max) @ Id, Vgs
22mOhm @ 7.9A, 10V

Documentation and references

Manufacturer datasheet ↗

Distributor reference ↗

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