Component information
FF4MR12W2M1HB11BPSA1
Infineon Technologies FF4MR12W2M1HB11BPSA1: FET, MOSFET Arrays. Package / Case: Module. Supplier Device Package: Module.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Manufacturer
- Infineon Technologies
- Series
- CoolSiC™
- Part Status
- Active
- Rds On (Max) @ Id, Vgs
- 4mOhm @ 200A, 18V
- Vgs(th) (Max) @ Id
- 5.15V @ 80mA
- Gate Charge (Qg) (Max) @ Vgs
- 594nC @ 18V
- Input Capacitance (Ciss) (Max) @ Vds
- 17600pF @ 800V
- Operating Temperature
- -40°C ~ 175°C (TJ)
- Technology
- Silicon Carbide (SiC)
- Configuration
- 2 N-Channel (Half Bridge)
- Drain to Source Voltage (Vdss)
- 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C
- 170A (Tj)
- Mounting Type
- Chassis Mount
- Package / Case
- Module
- Supplier Device Package
- Module
- Packaging
- Tray
- Base Product Number
- FF4MR12
Documentation and references
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ