Component information
FGA50S110P
FGA50S110P component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; IGBTs; Single IGBTs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; IGBTs; Single IGBTs
- Power - Max
- 300 W
- Manufacturer
- onsemi
- Input Type
- Standard
- Packaging
- Tube
- Gate Charge
- 195 nC
- Part Status
- Obsolete
- Operating Temperature
- -55°C ~ 175°C (TJ)
- IGBT Type
- Trench Field Stop
- Mounting Type
- Through Hole
- Voltage - Collector Emitter Breakdown (Max)
- 1100 V
- Package / Case
- TO-3P-3, SC-65-3
- Current - Collector (Ic) (Max)
- 50 A
- Supplier Device Package
- TO-3PN
- Current - Collector Pulsed (Icm)
- 120 A
- Base Product Number
- FGA50S110
- Vce(on) (Max) @ Vge, Ic
- 2.6V @ 15V, 50A
Documentation and references
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