Component information
FH102A-TR-E
FH102A-TR-E component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Power - Max
- 500mW
- Manufacturer
- onsemi
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 90 @ 20mA, 5V
- Packaging
- Tape & Reel (TR)
- Current - Collector (Ic) (Max)
- 70mA
- Part Status
- Obsolete
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- 2 NPN (Dual)
- Mounting Type
- Surface Mount
- Voltage - Collector Emitter Breakdown (Max)
- 10V
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Frequency - Transition
- 7GHz
- Supplier Device Package
- 6-MCP
- Noise Figure (dB Typ @ f)
- 1dB @ 1GHz
- Base Product Number
- FH102
- Gain
- 12dB
Documentation and references
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