Component information
FJN3302RTA
onsemi FJN3302RTA: Single, Pre-Biased Bipolar Transistors. Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads. Supplier Device Package: TO-92-3.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single, Pre-Biased Bipolar Transistors
- Manufacturer
- onsemi
- Part Status
- Obsolete
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- Frequency - Transition
- 250 MHz
- Transistor Type
- NPN - Pre-Biased
- Power - Max
- 300 mW
- Current - Collector (Ic) (Max)
- 100 mA
- Voltage - Collector Emitter Breakdown (Max)
- 50 V
- Resistors Included
- R1 and R2
- Resistor - Base (R1)
- 10 kOhms
- Resistor - Emitter Base (R2)
- 10 kOhms
- Mounting Type
- Through Hole
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package
- TO-92-3
- Packaging
- Tape & Box (TB)
- Base Product Number
- FJN330
Documentation and references
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