Component information
FJP2160DTU
FJP2160DTU component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- Current - Collector Cutoff (Max)
- 100µA
- Mfr
- onsemi
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 20 @ 400mA, 3V
- Series
- ESBC™
- Power - Max
- 100 W
- Packaging
- Tube
- Frequency - Transition
- 5MHz
- Part Status
- Obsolete
- Operating Temperature
- -55°C ~ 125°C (TJ)
- Transistor Type
- NPN
- Mounting Type
- Through Hole
- Current - Collector (Ic) (Max)
- 2 A
- Package / Case
- TO-220-3
- Voltage - Collector Emitter Breakdown (Max)
- 800 V
- Supplier Device Package
- TO-220-3
- Vce Saturation (Max) @ Ib, Ic
- 750mV @ 330mA, 1A
- Base Product Number
- FJP216
Documentation and references
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ